Micron and Intel Extend their Leadership in 3D NAND Flash memory
Micron Technology, Inc. (MU)
Last micron technology, inc. earnings: 3/25 04:01 pm
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Source: GlobeNewswire
News Highlights Intel-Micron delivers the 1st commercially available 1Tb - 4bits/cell (QLC) die in the history of semiconductorsQualification of 4bits/cell 3D NAND on 64 layer 2nd Gen 3D NAND has been completed. 4bits/cell (QLC) provides 33% higher density compared to 3bits/cell (TLC)3rd Generation 3D NAND uses 96 layers to maintain cost/density leadership3rd Generation 3D NAND enables the industry’s highest Gb/mm2 areal density BOISE, Idaho and SANTA CLARA, Calif., May 21, 2018 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq:MU), and Intel Corporation today announced production and shipment of the industry’s first 4bits/cell 3D NAND technology. Leveraging a proven 64-layer structure, the new 4bits/cell NAND technology achieves 1 terabit (Tb) density per die, the world's highest-density flash memory. The companies also announced development pr
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MU
Earnings
- 3/20/24 - Beat
MU
Sec Filings
- 4/23/24 - Form 4
- 4/22/24 - Form 4
- 4/19/24 - Form 8-K
- MU's page on the SEC website