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ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

ROHM CO LTD UNSP/ADR  (ROHCY) 
NASDAQ:AMEX Investor Relations: rohm.com/web/global/investor-relations
PDF Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver i [Read more]