Mitsubishi Electric to Launch Two New XB Series HVIGBT Modules
MITSUBISHI ELEC UNSP/ADR (MIELY)
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Source: Business Wire
For highly efficient, reliable inverter systems in railcars and large industrial equipment TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs) on December 9. These new high-capacity power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. Mitsubishi Electric will exhibit the new modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, as well as other exhibitions in North America, Europe, China, India and additional locations.The new modules use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar
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