Navitas Announces 3300V and 2300V UHV Silicon Carbide Product Portfolio, Augmenting Reliability and Performance in Mission-Critical Energy Infrastructure Applications
Navitas Semiconductor Corporation (NVTS)
Company Research
Source: GlobeNewswire
TORRANCE, Calif., Dec. 01, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, is announcing the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats. These new SiC products set a benchmark for reliability and enhanced performance in ultra-high voltage power electronics. Proprietary Trench-Assisted Planar (TAP) SiC MOSFET Technology Augments Performance and ReliabilityThese 3300V and 2300V UHV devices are based on Navitas’ fourth-generation GeneSiC™ platform which uses a TAP architecture to implement a multi-step e-field management profile that significantly reduces voltage stress and improves voltage blocking capabilities compared with trench and traditional-planar SiC MOSFETs. This TAP architecture is therefore able to provide increased long-term reliability
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NVTS
Earnings
- 11/3/25 - Beat
NVTS
Sec Filings
- 12/19/25 - Form EFFECT
- 12/18/25 - Form 424B3
- 12/16/25 - Form 4
- NVTS's page on the SEC website