Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers
Navitas Semiconductor Corporation (NVTS)
Company Research
Source: GlobeNewswire
TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and 1 MHz switching frequency, enabling unprecedented power density to support the rapid, large-scale expansion of next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC-DC platform employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency and 98.1% full load efficiency in a full-brick (61 × 116 × 11 mm) package, achieving 2.1 kW/in³ power density. The resulting production-oriented platform supports 800 V–to–50 V and + / - 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data cent
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News
- 1 Prediction for NVTS in 2026 [Yahoo! Finance]Yahoo! Finance
- "Gallium Nitride Semiconductor Devices Market Soars: Projected to Hit $24.53 Billion by 2030" [Yahoo! Finance]Yahoo! Finance
- Navitas Semiconductor to Report Q4 and Full Year 2025 Financial Results on Tuesday, February 24, 2026GlobeNewswire
- How Low Can Navitas Stock Go? [Forbes]Forbes
- Navitas (NVTS) Loses 9.6% as Tariffs Rattle Global Markets [Yahoo! Finance]Yahoo! Finance
NVTS
Earnings
- 11/3/25 - Beat
NVTS
Sec Filings
- 1/30/26 - Form SCHEDULE
- 12/19/25 - Form EFFECT
- 12/18/25 - Form 424B3
- NVTS's page on the SEC website