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0.00349428208386275 0.00550190597204579 0.00952986022871667 0.0146124523506989 0.0101651842439644 0.0117534942820839 0.0152477763659466 0.0111181702668361
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ON Semiconductor Introduces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

ON Semiconductor Corporation (ON) 
Last on semiconductor corporation earnings: 2/3 06:00 am Check Earnings Report
Company Research Source: Business Wire
New SiC MOSFET devices will enable better performance, higher efficiency and ability to operate under harsh conditions PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has expanded their range of wide bandgap (WBG) devices with the introduction of two additional families of silicon carbide (SiC) MOSFET. Intended for use in a variety of demanding high-growth applications including solar power inverters, on-board charging for electric vehicles (EV), uninterruptible power supplies (UPS), server power supplies, and EV charging stations, the new devices offer levels of performance that were simply not possible with silicon (Si) MOSFETs.ON Semiconductor’s new 1200 volt (V) and 900 V N-channel SiC MOSFETs deliver faster switching performance and enhanced reliability when compared to silicon. A fast intrinsic diode with low reverse recovery charge delivers a significant reduction in power losses, boosts operating frequencies, and increases the Show less Read more
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