Renesas Unveils First Bidirectional 650V-Class GaN Switch For Solar Power Inverters, AI Data Centers and More
RENESAS ELECTRON UNSP/ADR (RNECY)
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Source: Business Wire
First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion topologiesCompatible with standard gate driversSoft- and hard-switching capable, with fast, clean transitions TOKYO & SAN ANTONIO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of blocking both positive and negative currents in a single device with integrated DC blocking. Targeting single-stage solar microinverters, AI data centers and onboard electric vehicle chargers, the high-voltage TP65B110HRU dramatically simplifies power converter designs and replaces conventional back-to-back FET switches with a single low-loss, fast-switching, easy-to-drive device.This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20260323321928/e
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