ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection
ROHM CO LTD UNSP/ADR (ROHCY)
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Source: GlobeNewswire
Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off, delivering high reliability protection for a wide range of high-resolution image sensor applications such as ADAS cameras. Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision. This has created a growing concern – the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and IR has been a longstanding technical challenge. ROHM has overcome this hurdle by fundamentally redesigning the device structure – successfully developing an SBD that combines low VF with low IR which is ideal for protection applications. The RBE0
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