ROHM's New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off [Y...
ROHM CO LTD UNSP/ADR (ROHCY)
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Source: Yahoo! Finance
ROHM's SBD Lineup and Comparison of Standard Trench MOS vs. ROHM SBDs Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading [1] reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications. Although numerous types of diodes exist, highly efficient SBDs are increasingly being used in a variety of applications. SBDs with a trench MOS structure provide lower V F than planar types and enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies, resulting in higher power loss when used for switching. In response, ROHM developed a new series of SBDs utilizing a proprietary trench MOS structure that simultaneously reduces both V F and I R (which are in a trade-off relationship) while also achie
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