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Stock impact report

IMEC Achieves a World-record GaN Breakdown Voltage Exceeding 650 V on Shin-Etsu Chemical's 300-mm QST™ Substrate [Yahoo! Finance]

SHIN-ETSU CHEM UNSP/ADR (SHECY) 
NASDAQ:AMEX Investor Relations: shinetsu.co.jp/en/ir
Company Research Source: Yahoo! Finance
Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, "Shin-Etsu Chemical") developed, has been adopted for the 300-mm GaN power device development program at IMEC , where sample evaluation is in progress. In the evaluation, the 5 µm-thick HEMT device using a QST TM substrate achieved a record-breaking voltage resistance exceeding 650 V for a 300mm substrate. Shin-Etsu Chemical, licensed by QROMIS, Inc. (Head office: CA, U.S.A, CEO: Cem Basceri, hereafter "QROMIS"), manufactures 150-mm and 200-mm QST™ substrates, as well as GaN-on-QST™ epitaxial substrates of various diameters. In September 2024, we started providing 300-mm QST™ samples in a joint initiative with QROMIS. Furthermore, Shin-Etsu Chemical and QROMIS have established a close partnership to provide 300-mm QST™ substrates for the state-of-the-art 300-mm CMOS fab of IMEC, which is based in Leuven, Belgium. IMEC is a 300-mm GaN power device development program that was officially launc Show less Read more
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