Toppan Photomask Signs Agreement with IBM for Joint R&D on Semiconductor EUV Photomasks
TOPPAN INC S/ADR (TOPPY)
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Source: PR Newswire
Advancing development of EUV photomasks for IBM's 2 nanometer technology designsTOKYO, Feb. 7, 2024 /PRNewswire/ -- Toppan Photomask, the world's premier semiconductor photomask provider, announced that it has entered into a joint research and development agreement with IBM related to the 2 nanometer (nm) logic semiconductor node, using extreme ultraviolet (EUV) lithography. This agreement also includes High-NA EUV photomask development capability on next-generation semiconductors.Based on this agreement, for a period of five years starting 1Q 2024, IBM and Toppan Photomask plan to develop photomask capability at the Albany NanoTech Complex (Albany, NY, USA) and Toppan Photomask's Asaka Plant (Niiza, Japan).Mass production of 2nm node and beyond semiconductors requires advanced knowledge in material selection and process control that far exceed the requirements of conventional mainstream exposure technology using an ArF excimer laser as a light source. The IBM and Toppan Photomask agr
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