Toshiba Releases Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies [Yahoo! Finance]
TOSHIBA CORP UNSP/ADR (TOSYY)
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Source: Yahoo! Finance
KAWASAKI, Japan, February 22, 2024 BUSINESS WIRE Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation [1] DTMOSVI series with a super junction structure. Shipments of the first two products " TK042N65Z5 " and " TK095N65Z5 ," 650V N-channel power MOSFETs in TO-247 packages, start today. The new products use high-speed diodes to improve the reverse recovery [2] characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (t rr ), and an 88% reduction in reverse recovery charge (Q rr ) (measurement conditions: -dI DR /dt= 100A/µs). The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba's DTMOSIV series with high-speed diodes (DTMOSIV(HSD)
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